IRF2907ZS-7PPBF 전력 Mosfet IC 트랜지스터 HEXFET® 전력 MOSFET
상술
Pulsed Drain Current:
700 A
Maximum Power Dissipation:
300 W
Linear Derating Factor:
2.0 W/°C
Gate-to-Source Voltage:
± 20 V
Operating Junction and Storage Temperature:
-55 to + 175°C
Soldering Temperature, for 10 seconds:
300°C (1.6mm from case )
하이라이트:
power mosfet ic
,multi emitter transistor
도입
Array
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주식:
MOQ:
10pcs